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A new year brings a new show season to AMI with upcoming exhibits in San Francisco, Shanghai, Anaheim, CA and a return to CLEO in San Jose, CA.
First up is BiOS February 1 – 2 at the Moscone Center in San Francisco, CA. Part of the Photonics West conference, BiOS is the world’s largest biomedical photonics conference. AMI looks forward to discussing our newest innovations with researchers and laser design engineers in the medical field. AMI has been continuously producing OEM electronics for medical laser systems for over 30 years. This will be our 8th year at BiOS.
AMI’s BiOS booth number is 8118.
On the heels of BiOS is the main event SPIE Photonics West February 4 – 6, also at the Moscone Center in San Francisco, CA. Personally this will be my 23rd consecutive year representing AMI at this exhibit. AMI however has a much longer history with this event going back to OE/LASE. Pictured above is AMI’s founder Ian Crawford at our booth in 1986.
Photonics West is North America’s largest biophotonics, laser, optoelectronics, and industrial manufacturing event. AMI has been a fixture at this exhibit for almost 40 years.
AMI’s Photonics West booth number is 1629.
Laser Shanghai 2019
From March 17 – 22 AMI will be exhibiting at Laser Shanghai, booth number W3.3702. In April we are taking our road show to Anaheim, CA for SPIE’s Defense and Commercial Sensing conference booth number 7012 from April 28 – 30. AMI is returning to CLEO in San Jose, CA May 12 – 14; booth number 2519.
Laser Munich 2019
If you are going to be at any of these conferences please stop by our booth. We would like to meet you, discuss your applications and see if we can help your archive or exceed your production and technical performance goals.
AMI’s Booth Through the Years
1980’s
1990’s
2000’s
2010’s
Hybrid eyesafe laser rangefinder receiver is designed for laser rangefinding & surveying equipment. Compact construction is ideal for miniature applications. Fast recovery from To overload allows ranging to close objects without compromising long range performance. The incorporation of an InGaAs APD gives very high sensitivity with time programmed gain to minimize false targets. Operation at both 1.06 µm and 1.54 µm is possible over a wide range of pulse widths.
